The growth of InN nanodots on Si(111) by droplet epitaxy
碩士 === 國立東華大學 === 材料科學與工程學系 === 103 === InN nanodots (NDs) were fabricated on Si (111) substrates by droplet epitaxy using plasma-assisted molecular beam epitaxy (PA-MBE) system. Indium metallic droplets can be deposited at different temperatures (from 250 oC to 450 oC) in the ultra-high vacuum cond...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/51970289213963479566 |