Research of Si-based and Flexible Selectors for RRAM and their Maximum Readout Margin
碩士 === 國立東華大學 === 電機工程學系 === 103 === The mainstream flash memory is facing the difficult scaling problem to be solved nowadays. The next-generation non-volatile memory becomes much important due to its fast operations speed, long memory time, low operation voltage, high storeged density, easily scal...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ks8d4z |