Study on Resistance Random Access Memory with Self-formed Selector
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 103 === This paper is surrounded by silicon oxide layer embedment in switching layer in resistive random access memory (RRAM). First use of multi-target magnetron sputtering system making silicon oxide films embedment in ZnO/TiN and covered Pt with top electrode. M...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gss7zu |