The evolutional mechanisms of hot carrier degradation in advanced high-k/metal gate MOSFETs
博士 === 國立中山大學 === 物理學系研究所 === 103 === To achieve high speed, the continuous scaling down of metal oxide semiconductor field electrical field transistors is driving conventional SiO2-based dielectric to be only a few atomic layers thick, leading to excessive gate leakage current and reliability issue...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31956265666848029321 |