Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors
碩士 === 國立中山大學 === 電機工程學系研究所 === 103 === With the evolution of modern technology, displays have been an important part in our life and thin film transistor plays a quite crucial role. Metal-oxide thin film transistor has attracted much attention recently since it possesses the advantages of both amor...
Main Authors: | Su-chun Kuo, 郭素君 |
---|---|
Other Authors: | Ting-Chang Chang |
Format: | Others |
Language: | zh-TW |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/37666629307383722199 |
Similar Items
-
Electrical Analysis and Physical Mechanisms of Structure–depended Negative Bias Illumination Stress in InGaZnO Thin Film Transistors
by: Yi-Chun Wu, et al.
Published: (2015) -
Study on the time response of a-InGaZnO thin film transistor to dynamic illumination and bias stress
by: Chen, Ya-Wei, et al.
Published: (2014) -
Post processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-Illumination Stress Reliability
Published: (2013) -
Study on the time response of a-InGaZnO thin film transistor under pulse illumination and positive bias stress
by: Chang, Chun-Yi, et al.
Published: (2013) -
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
by: Dapeng Wang, et al.
Published: (2019-05-01)