Design and Fabrication of GaN-Based SBDs on Silicon for Suppressing Surface Leakage Current
碩士 === 國立清華大學 === 電子工程研究所 === 103 === AlGaN/GaN HEMT have attracted considerable interests for high speed and high power switching application due to the outstanding electronic properties including high sheet charge density (>1013 cm-2) of the two dimensional electron gas (2DEG), high thermal con...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14884989827156989253 |