The Fabrication of InP-Based Near-Infrared Broadband LED

碩士 === 國立清華大學 === 電子工程研究所 === 103 === In this research, we demonstrated a novel planar-type InP-based near-infrared (NIR) broadband light-emitting diodes (LED) by using the rapid thermal diffusion (RTD) technique. The active layer consists of multiple double hetrostructures (DH) of InP/GaxIn1-xAsyP1...

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Bibliographic Details
Main Authors: Lou, Yi-Lin, 樓宜林
Other Authors: Wu, Meng-Chyi
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/4b52hv