Reverse Current Sensing with Layer-aware Temperature compensation for 3D BE-SONOS TFT NAND Flash Memory
碩士 === 國立清華大學 === 電機工程學系 === 103 === Nowadays, the wide-spread usage of the large data storage devices contributes to the indispensable status of the NAND Flash memory. With the smallest cell area among the 2D memories, NAND Flash memory holds the superiority in cell density and cost. The state-of-t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09236407271294388105 |