Diffusion and growth of Si on W surfaces
碩士 === 國立臺灣師範大學 === 物理學系 === 103 === The study is about diffusion dynamics and growth structure of Si adatoms on W surfaces by field ion microscope. The diffusion activation energy of Si adatom on W(110) and W(211) surfaces are 0.66±0.04(eV) and 0.48±0.01(eV) respectively. In growth structure stud...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22435481939381704813 |