Fabrication of Ferroelectric Negative Capacitance MOSFETs and Self-Aligned Fin-Shaped TFETs Compatible with CMOS Process

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 103 === The enhancement performance of steep swing may reduce power consumption and be a candidate of next generation technology node in CMOS industry.In this work, the superior subthreshold swing is obtained by NC effect with dielectric CET=0.98nm, which the combi...

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Bibliographic Details
Main Authors: Cheng, Chih-Ching, 鄭智璟
Other Authors: Lee, Min-Hung
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/27126023298927217666