Improve Epitaxy and Efficiency Droop of GaN-based LEDs on Nano-Patterned Substrates with Spacing Optimization
碩士 === 國立臺灣大學 === 光電工程學研究所 === 103 === GaN-based Light-Emitting Diodes (LEDs) are typically grown on c-plane sapphire substrates. Due to the large lattice mismatch between GaN and the substrate, GaN on sapphire exhibits lots of threading dislocations (TDs), and as to control them, one can change the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48786810772804370541 |