3D Finite Element Strain Analysis of GaN based LED Nanostructures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 103 === Due to the energy crisis, GaN-based light emitting diodes (LEDs) become more popular due to their better power efficiency. However, GaN-based LEDs still have many problems. One of them is the lattice mismatch between InGaN and GaN. The strain induced by lattice...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24072704649551182734 |