Investigation of structure and interfacial properties of In situ ALD-Y2O3 on GaAs
碩士 === 國立臺灣大學 === 物理研究所 === 103 === Owing to the demand in attaining electronic devices with higher speed and lower power consumption for CMOS, it is critically urgent to find another high k/high carrier mobility semiconductor to be employed in the MOSFETs. GaAs, being feverishly studied as a viabl...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00269289793177765908 |