HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We ho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51062473142267347901 |