Study on 1,2,4-Triazole Slurry for Post Clean of Cu CMP Process
碩士 === 國立臺灣科技大學 === 機械工程系 === 103 === The wafer surface usually leaves abundant particles, metal ions and contaminations after chemical mechanical polishing (CMP) process. Once each contaminations and the scratches can not be removed clearly, it can affect the following photolithography or doping pr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/76880961859362041110 |