Study on 1,2,4-Triazole Slurry for Post Clean of Cu CMP Process

• Main Authors: Pei-Yu Tai, 戴佩瑜
• Other Authors: Chao-Chang Chen
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/76880961859362041110

碩士 === 國立臺灣科技大學 === 機械工程系 === 103 === The wafer surface usually leaves abundant particles, metal ions and contaminations after chemical mechanical polishing (CMP) process. Once each contaminations and the scratches can not be removed clearly, it can affect the following photolithography or doping process. Thus the post clean of CMP process plays a significant role in high volume manufacturing. In this study, 1,2,4-Triazole inhibitor has been investigated for post clean of CMP process and etching experiments can obtain the optimal parameters to reduce the polishing time. Copper blanket wafers are need for testing. Two different kinds of inhibitor 1,2,4-Triazole and BTA have been utilized in slurry for CMP process. Result indicates that the 1,2,4-Triazole inhibitor can obtain better surface roughness Sa reducing 28.3% from 2.47nm to 1.77nm under the same condition of slurry with BTA inhibitor. In addition, result of applying normal nonionic or mix-nonionic surfactant in cleaning procedure indicate that the mix-nonionic surfactant is capable of removing 1,2,4-Triazole inhibitor and maintains the same quality of surface roughness as well. Finally the 1,2,4-Triazole inhibitor is able to improve the efficiency and the mix-nonionic surfactant can be employed in post clean of CMP process. Future study can focus on different slurry and temperature effects on 1,2,4-Triazole inhibitor application.