Study on 1,2,4-Triazole Slurry for Post Clean of Cu CMP Process
碩士 === 國立臺灣科技大學 === 機械工程系 === 103 === The wafer surface usually leaves abundant particles, metal ions and contaminations after chemical mechanical polishing (CMP) process. Once each contaminations and the scratches can not be removed clearly, it can affect the following photolithography or doping pr...
Main Authors: | Pei-Yu Tai, 戴佩瑜 |
---|---|
Other Authors: | Chao-Chang Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/76880961859362041110 |
Similar Items
-
Mechanics of CMP and Post-CMP Cleaning
Published: () -
Study on Electrical Properties of Cu Interconnect after Post CMP Cleaning
by: Hsueh Kuo-Chin, et al.
Published: (2004) -
A study of post CMP cleaning beyond 45nm Cu-Low K interconnection process.
by: Chin-Chan Yu, et al.
Published: (2009) -
Study of Inhibitor Degradation in an Alkaline-Based Post-Cu CMP Cleaning Solution
by: Lai, Shin-Mei, et al.
Published: (2012) -
Improvement on Thinning Process of TSV CMP Slurry
by: Yi-WeiLu, et al.
Published: (2012)