The effect of Cu2O thickness on resistive switching of Ti/Cu2O/Ti device
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === In this study, we used titanium (Ti) as the top and bottom electrode, cuprous oxide (Cu2O) as the dielectric layer to fabricateTi/Cu2O/Ti RRAM device by magnetic sputtering process. We also analyzed the structure and electrical properties of the devices with...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/76798591144966401687 |