The Investigation on Subthreshold Behavior Model for the Tri-Gate/Surrounding-Gate MOSFETs with the Interface Trapped Charges/Gate-Stack Structure
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 103 === In this thesis, based on the parabolic approach and exact solution of the Poisson equation, an analytical subthreshold model for the tri-Gate/surrounding-gate MOSFETs with the interface trapped charges/gate-stack structure is developed. The model explicitly sh...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15575780924306912422 |