Coating process improvement in a sputtering system and its applications in copper-coating on transparent conductive film.

• Main Authors: Wei-Pin Su, 蘇巍繽
• Other Authors: Wei-Ching Chuang
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/9h92an

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 103 === In this paper, splashed against a horizontal cross design flaws and bottlenecks after the film output efficiency of laboratory equipment, and to transform the device and re-optimization process conditions. Divided into two parts which improve the level of discussion in the original equipment without RGA gas molecules under the supervision of, a transparent conductive film flexible substrate annealing after aging, the more water vapor molecules into the vacuum chamber to experience content license of the PET film carrier will affecting the pumping efficiency and deposition of transition metal splash resistance and adhesion, thereby improving impact factor. Institutions side: establishing an additional vacuum chamber with a heater and a turbo-molecular pump in the design, aimed at reducing (ITO) transparent conductive film substrate before entering soft splash crossing deposition chamber, with the top of the heater cavity hot baking load and substrate and with a turbo-molecular pump in a further reduction in the effective water under vacuum gas molecules in order to achieve the best of the pumping rate. Process side: In PET heat allowable range (> 160 ℃, the surface temperature is too high, after crossing the film Film vulnerable splash cold stress warping), and then adjust the optimum parameters, the new chamber vacuum heating operation time was 75sec, The average surface temperature of the substrate is heated 105 ℃, turbo-molecular pump routing operation under vacuum pressure can reach <7.0E-2Pa. Finally, after the transformation of the horizontal crossing splash laboratory equipment used in the capacitive touch panel membrane processes, the use of ITO transparent conductive film substrate to splash copper (Cu) deposition rate and uniformity of the metal film, supplemented by: atomic force microscopy (AFM) can be used to derive the characteristics and thickness of the copper film surface; a scanning electron microscope (SEM) of the surface microstructure observation and analysis of the copper film; four-point probe (lower panel of anti-meter) measured copper film surface resistance . The results obtained from the best data for copper deposition rate 14mm / sec, copper impedance <0.3Ω, high adhesion, and film output efficiency 49.6%.