The study of Enhancement-mode GaN-based HEMTs formed by Selective-area regrowth technology
碩士 === 南臺科技大學 === 光電工程系 === 103 === Currently, gallium nitride (GaN) based high electron mobility transistors (HEMTs) have been promising candidates for high-power electronic applications due to their excellent properties, such as high breakdown voltage, high switching frequency, and good thermal st...
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81582816755190602286 |