The effect of Quantum Barrier Growth Rate in Nitride-Based Light-Emitting Diodes
碩士 === 南臺科技大學 === 電子工程系 === 103 === In this research, we changed active layer structure of nitride-based light emitting diodes and measuring the electrical and optical properties, temperature effect, and electrostatic discharge ability. We fabricate three different barrier growth rate for LED I, II,...
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| Format: | Others |
| Language: | zh-TW |
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104
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9w4w84 |