Enhancement in Output Power of Nitride-based Blue Light Emitting Diodes by Using an Electron Retarded Layer
碩士 === 南臺科技大學 === 電子工程系 === 103 === In the work, the InGaN/GaN MQW blue LEDs with and without a p-type AlGaN layer as the electron retarded layer (ERL) in front of MQW were fabricated and investigated. The LEDs with ERL were labeled as LED II and the LEDs without ERL were labeled as LED I. The forwa...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/t5xuxp |