The Investigation of Nitride-based Light Emitting Diodes with Inserting Low Temperature n- GaN Electron Transmission Layer between Pre-strain Layer and Active Layer.
碩士 === 南臺科技大學 === 電子工程系 === 103 === In our study, we insert electron transmission layer (ETL) between active layer and pre-strain layer. This layer could impact polarization and electron transmission characteristic for LED. We propose three kind of ETL structure, LED I with 15nm thickness and 2x1018...
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6m45zv |