The Effect of Current Collapse in GaN HEMT to A Buck Converter
碩士 === 東海大學 === 電機工程學系 === 103 === A GaN high-electron-mobility field effect transistor (HEMT) with a two-dimensional electron gas (2DEG) as the channel is often used in high-frequency circuit. Usually lower on-resistance in semiconductor devices can be achieved by increasing element area. But incre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60515938960674155861 |