Study on Structure properties of SiC/Cu Low Temperature Bonding
碩士 === 國立臺北科技大學 === 製造科技研究所 === 103 === The main purpose of this study was SiC/Cu direct bonding, we used 400°C, 500°C and 600°C with one hour hot press process. We focused on bonding mechanism and technical characters. First we used PVD to prepare metallized ceramic surface, then directly bonding t...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/f4pjj2 |