Drain Bias Effects in 28 nm HK/MG nMOSFET

碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === Due to the few recent researches investigating the degradation of nano-node nMOSFET and the leakage under the drain bias, but the leakage current is one of important factor for MOSFET performance, therefore, the main study in this thesis focuses on this trend...

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Bibliographic Details
Main Authors: Yi-Ming Li, 李翊銘
Other Authors: Mu-Chung Wang
Format: Others
Online Access:http://ndltd.ncl.edu.tw/handle/eapuf7