A Study of Plasma Temperature
碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the rea...
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ndltd-TW-103TIT056510822019-07-06T05:58:19Z http://ndltd.ncl.edu.tw/handle/q4d7cu A Study of Plasma Temperature 電漿溫度之探討 Ng Yong Siong 黃榮祥 碩士 國立臺北科技大學 機電整合研究所 103 With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the reactor temperature field phenomenon, to make the plasma temperature simulations more close to the reality, we also consider the effects of flow field and heat transfer. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of chamber walls in chamber. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of surface morphology and chamber walls in chamber. Result find out that affect the existence of plasma distribution and temperature by pressure. The mixture gas of hydrogen was supplied microwave plasma jet chemical vapor deposition (MPJCVD) system. Calculation of temperature distribution within MPJCVD system was done and compared with measurements using thermal couples. Then 30-80 Torr the thermal conductivity of the plasma around specimen was found to be 6-10 W‧m-1‧K-1,then the pressure of 50 torr for example, simulate the temperature of the surface maximum temperature 509.81 ℃, minimum temperature 323.14 ℃. Then the mixture gas of methane, nitrogen, and hydrogen was supplied to grow carbon nanofilms using microwave plasma jet chemical vapor deposition (MPJCVD) system, methods of different locations to simulate the growth of carbon nanotubes results,the surface morphology and microstructure were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The results showed that four groups in different locations specimen temperatures were 480.85 ℃, 424.52 ℃, 474.9 ℃, 414.27 ℃. Grow up in the same environment left the 3rd best quality specimen location, its carbon tube diameter is 44.32nm, ID / IG ratio of 0.61, the voltage is 13V. 蘇春熺 學位論文 ; thesis 0 zh-TW |
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碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the reactor temperature field phenomenon, to make the plasma temperature simulations more close to the reality, we also consider the effects of flow field and heat transfer. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of chamber walls in chamber. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of surface morphology and chamber walls in chamber. Result find out that affect the existence of plasma distribution and temperature by pressure.
The mixture gas of hydrogen was supplied microwave plasma jet chemical vapor deposition (MPJCVD) system. Calculation of temperature distribution within MPJCVD system was done and compared with measurements using thermal couples. Then 30-80 Torr the thermal conductivity of the plasma around specimen was found to be 6-10 W‧m-1‧K-1,then the pressure of 50 torr for example, simulate the temperature of the surface maximum temperature 509.81 ℃, minimum temperature 323.14 ℃. Then the mixture gas of methane, nitrogen, and hydrogen was supplied to grow carbon nanofilms using microwave plasma jet chemical vapor deposition (MPJCVD) system, methods of different locations to simulate the growth of carbon nanotubes results,the surface morphology and microstructure were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The results showed that four groups in different locations specimen temperatures were 480.85 ℃, 424.52 ℃, 474.9 ℃, 414.27 ℃. Grow up in the same environment left the 3rd best quality specimen location, its carbon tube diameter is 44.32nm, ID / IG ratio of 0.61, the voltage is 13V.
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author2 |
蘇春熺 |
author_facet |
蘇春熺 Ng Yong Siong 黃榮祥 |
author |
Ng Yong Siong 黃榮祥 |
spellingShingle |
Ng Yong Siong 黃榮祥 A Study of Plasma Temperature |
author_sort |
Ng Yong Siong |
title |
A Study of Plasma Temperature |
title_short |
A Study of Plasma Temperature |
title_full |
A Study of Plasma Temperature |
title_fullStr |
A Study of Plasma Temperature |
title_full_unstemmed |
A Study of Plasma Temperature |
title_sort |
study of plasma temperature |
url |
http://ndltd.ncl.edu.tw/handle/q4d7cu |
work_keys_str_mv |
AT ngyongsiong astudyofplasmatemperature AT huángróngxiáng astudyofplasmatemperature AT ngyongsiong diànjiāngwēndùzhītàntǎo AT huángróngxiáng diànjiāngwēndùzhītàntǎo AT ngyongsiong studyofplasmatemperature AT huángróngxiáng studyofplasmatemperature |
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