A Study of Plasma Temperature

碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the rea...

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Main Authors: Ng Yong Siong, 黃榮祥
Other Authors: 蘇春熺
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/q4d7cu
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spelling ndltd-TW-103TIT056510822019-07-06T05:58:19Z http://ndltd.ncl.edu.tw/handle/q4d7cu A Study of Plasma Temperature 電漿溫度之探討 Ng Yong Siong 黃榮祥 碩士 國立臺北科技大學 機電整合研究所 103 With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the reactor temperature field phenomenon, to make the plasma temperature simulations more close to the reality, we also consider the effects of flow field and heat transfer. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of chamber walls in chamber. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of surface morphology and chamber walls in chamber. Result find out that affect the existence of plasma distribution and temperature by pressure. The mixture gas of hydrogen was supplied microwave plasma jet chemical vapor deposition (MPJCVD) system. Calculation of temperature distribution within MPJCVD system was done and compared with measurements using thermal couples. Then 30-80 Torr the thermal conductivity of the plasma around specimen was found to be 6-10 W‧m-1‧K-1,then the pressure of 50 torr for example, simulate the temperature of the surface maximum temperature 509.81 ℃, minimum temperature 323.14 ℃. Then the mixture gas of methane, nitrogen, and hydrogen was supplied to grow carbon nanofilms using microwave plasma jet chemical vapor deposition (MPJCVD) system, methods of different locations to simulate the growth of carbon nanotubes results,the surface morphology and microstructure were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The results showed that four groups in different locations specimen temperatures were 480.85 ℃, 424.52 ℃, 474.9 ℃, 414.27 ℃. Grow up in the same environment left the 3rd best quality specimen location, its carbon tube diameter is 44.32nm, ID / IG ratio of 0.61, the voltage is 13V. 蘇春熺 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺北科技大學 === 機電整合研究所 === 103 === With the rapid development of semiconductor industry, the study of process technology the more important, the use of simulations projected results reduce costs and time. This study used the simulation of Microwave Plasma Jet Chemical Vapor Deposition , the reactor temperature field phenomenon, to make the plasma temperature simulations more close to the reality, we also consider the effects of flow field and heat transfer. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of chamber walls in chamber. In MPJCVD chamber thermal analysis, combined with plasma simulation results, and investigated temperature distribution of surface morphology and chamber walls in chamber. Result find out that affect the existence of plasma distribution and temperature by pressure. The mixture gas of hydrogen was supplied microwave plasma jet chemical vapor deposition (MPJCVD) system. Calculation of temperature distribution within MPJCVD system was done and compared with measurements using thermal couples. Then 30-80 Torr the thermal conductivity of the plasma around specimen was found to be 6-10 W‧m-1‧K-1,then the pressure of 50 torr for example, simulate the temperature of the surface maximum temperature 509.81 ℃, minimum temperature 323.14 ℃. Then the mixture gas of methane, nitrogen, and hydrogen was supplied to grow carbon nanofilms using microwave plasma jet chemical vapor deposition (MPJCVD) system, methods of different locations to simulate the growth of carbon nanotubes results,the surface morphology and microstructure were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The results showed that four groups in different locations specimen temperatures were 480.85 ℃, 424.52 ℃, 474.9 ℃, 414.27 ℃. Grow up in the same environment left the 3rd best quality specimen location, its carbon tube diameter is 44.32nm, ID / IG ratio of 0.61, the voltage is 13V.
author2 蘇春熺
author_facet 蘇春熺
Ng Yong Siong
黃榮祥
author Ng Yong Siong
黃榮祥
spellingShingle Ng Yong Siong
黃榮祥
A Study of Plasma Temperature
author_sort Ng Yong Siong
title A Study of Plasma Temperature
title_short A Study of Plasma Temperature
title_full A Study of Plasma Temperature
title_fullStr A Study of Plasma Temperature
title_full_unstemmed A Study of Plasma Temperature
title_sort study of plasma temperature
url http://ndltd.ncl.edu.tw/handle/q4d7cu
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