Improving Breakdown Voltage for double-Channel AIGaN/GaN HEMTs with Slant Field-Plate
碩士 === 國立雲林科技大學 === 電子工程系 === 103 === AlGaN/GaN high electron mobility transistor short for HEMTs because of its excellent material properties, is very suitable for high temperature and high power high frequency. According to the study pointed out that the improving breakdown voltage can increase...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79002115331023624529 |