| Summary: | 碩士 === 元智大學 === 光電工程學系 === 103 === The benefits provided by pulse-DC sputtering were expected to improve thin-film structural, surface morphology, and the optoelectronic properties of a-IGZO thin films. However, the study of the device performances of a-IGZO TFTs fabricated by pulse-DC magnetron sputtering was still scant. In this study, the optoelectronic characteristics IGZO-TFTs fabricated by pulse-DC magnetron sputtering were thoroughly elucidated. Various pulse-frequencies from 170 to 350 kHz were modulated in this study for achieving IGZO thin films with improved surface flatness, carrier mobility, and material quality. The IGZO-TFT developed by RF sputtering deposition was also compared as a reference sample. The IGZO films with the lowest surface roughness were adopted as the transistor channel layer of a TFT, which exhibited an improved field-effect mobility of 12.97 cm2 / V-s, a S.S. of 0.45 V / dec, an off current of 5.13 #westeur024# 10-10 A, and an on-off current ratio of 1.84 #westeur024# 106.
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