Investigation on reducing dislocation density of AlN/sapphire prepared by low temperature sputtering
碩士 === 中原大學 === 電子工程研究所 === 104 === In this study, the dislocation density of Aluminium Nitride thin films on sapphire substrates have been reduced by two-step growth using low temperature helicon sputtering system. AlN films are affected by changing buffer layer growth temperatures. The str...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5epqjc |