The Research of Slicing Parameters by Using Multi-wire Sawing Diamond Wire to Slice Sapphire Ingot

• Main Authors: Yeh, Shou-Chih, 葉守智
• Other Authors: Chu, Ching-Jiung
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/73488163450562243720

碩士 === 遠東科技大學 === 機械工程研究所在職專班 === 104 === With the great progress in material technology, brittle materials have been developed and applied to many practical fields. In recent decades industries of smiconductor, solar energy, light-emitting diode(LED ), etc. Have used several brittle materials, such as semiconductor wafer, monocrystalline solar panel, polycrystalline solar panel and LED sapphire substrate, etc, as basic raw materials. The Mohs hardness of silicon material is about 7. The major parameters on slicing machine when one slices the silicon substrate using multi-wire sawing are wire speed, table speed, wire tension and reeling capacity of new wire. The Mohs hardness of sapphire is 9, only slightly softer than diamond. In other work, sapphire is a very hard material and very difficult to process. When one tries to slice sapphire substrate just using the parameters of silicon substrates, it definitely will fail if without using the rocking angle during slicing process. This thesis investigated the effects of slicing rock angles on the variation of total thickness, deformation, surface roughness, and cutting depth during slicing the sapphire ingot by electroplate diamond wire sawing using multi-wire sawing machine (TAKATORI 610SD). Experimental results indicated that rocking angle should be included during slicing 2 inch sapphire by diamond. Moreover, it was found that the larger the rocking angle the better the slicing quality. In other words, smaller variation of total thickness and better surface roughness of slices can be obtained if adopts larger rocking angle. Moreover, to obtain the best quality it is proposed to process the sapphire ingot within the range of rocking angles 4.5ﾟ~6ﾟ.