Lateral Epitaxial Overgrowth of ZnO Layers on Patterned ZnAl2O4 Buffer Layers by Continuous Flow Reactor
碩士 === 義守大學 === 材料科學與工程學系 === 104 === The growth of high quality zinc oxide (ZnO) epitaxial layers is very critical for the fabrication of ZnO-based optoelectronic device. To further reduce dislocation density in epi-layer, lateral epitaxial overgrowth (LEO) integrating with patterning processing ha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/aavk56 |