Electromigration induced failure on TSV with various RDL widths of 3D ICs
碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 104 === As electronics products is versatile and continue to shrink in size, which leads to 2.5D and 3D IC by means of through silicon via (TSV) technique is regarded as a promising innovation in assembly industry. However,increase the number of digital I/O...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d5qvmw |