Electromigration induced failure on TSV with various RDL widths of 3D ICs

• Main Authors: YEH, MEI-CHUAN, 葉美娟
• Other Authors: HO, TSUNG-HAN
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/d5qvmw

碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 104 === As electronics products is versatile and continue to shrink in size, which leads to 2.5D and 3D IC by means of through silicon via (TSV) technique is regarded as a promising innovation in assembly industry. However,increase the number of digital I/O pins, the higher current density of current flowing through the trace,electromigration induced failure has become a serious reliability issues. This research is focused on electromigration behavior with different microstructure which is one factor of electromigration lifetime in the literature. Studied on the microstructure of TSV on 2.5D IC with different RDL width, different RDL structures between top and bottom and different grain sizes by annealing. Electron flow in different directions has been considered due to differences structure of the top and bottom. In addition, Current density distributions are also discussed using finite element method. In this research, define the electromigration failure as the resistance increase reaches 3% of its initial value. The results indicated that the electron flow up-stream configurations easier to fail due to current density can be dispersed by top RDL structure. The bottom RDL width with 20μm have higher lifetime due to the temperature of TSV is lower. Significant grain growth with 270℃/2 hrs annealing condition and shows the better electromigration resistance that the lifetime is longer than 7000 hrs.