The Study of Resistance Switching Behavior in Phosphorus doped ZnO Thin Film for RRAM

碩士 === 銘傳大學 === 電子工程學系碩士班 === 104 === This work addresses the trap characterization and conductance quantization of bipolar resistive switching devices using the transparent phosphorus-doped ZnO (PZO) films. The average transmittance in the visible light region and optical band gap of the PZO films...

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Bibliographic Details
Main Authors: YANG,MING-YU, 楊閩瑜
Other Authors: CHIU,FU-CHIEN
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/86006153447402897379