Early voltage variation and dependence of VT implant energies on different p-channel FinFETs with temperature stress
碩士 === 明新科技大學 === 電子工程系碩士班 === 104 === Emphasizing the high performance, high density, and low cost of IC products, the conventional IC products made with 2D structure can’t be satisfied. In the nano-node process, the fin field-effect transistor (FinFET) proposes the benefit to conquer this bottlene...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77427469634940771299 |