Ultrathin InGaN Light-Emitting Membranes
碩士 === 國立中興大學 === 材料科學與工程學系所 === 104 === In this study, GaN-based light-emitting diodes (LEDs) were lifted-off as a light-emitting diodes membranes by electrochemical wet etching technique. The heavy Si-doped GaN:Si sacrificial layer was inserted into the InGaN LED structure that the lateral wet etc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59049063619658877916 |