Ultrathin InGaN Light-Emitting Membranes

• Main Authors: Bo-Song Huang, 黃柏淞
• Other Authors: Chia-Feng Lin
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/59049063619658877916

碩士 === 國立中興大學 === 材料科學與工程學系所 === 104 === In this study, GaN-based light-emitting diodes (LEDs) were lifted-off as a light-emitting diodes membranes by electrochemical wet etching technique. The heavy Si-doped GaN:Si sacrificial layer was inserted into the InGaN LED structure that the lateral wet etching rate had been enhanced. The ITO/Ti/Au layers deposited on p-GaN:Mg layer acted the protection layer and provided the mechanical strain during the lift-off processes. In the Raman spectra, the Raman peak of the NM-LED was observed at 566.3 cm-1 that had a 5.2 cm-1 shifted compared with the non-treated ST-LED (571.5cm-1). In the photoluminescence spectra, the peak wavelength of the NM-LED had a 4.0nm blueshifted compared to the ST-LED. The electroluminescence　spectra were measured at 529.9nm for ST-LED and 524.4nm for the NM-LED, respectively. The divergent angle of the NM-LED was 97° that was narrowed compared with the ST-LED (113°).