P-N GaN nanodevice fabrication and transfer technology

碩士 === 國立成功大學 === 化學工程學系 === 104 === Due to high surface-to-volume ratio and low defect concentration, gallium nitride 1-D nano-structure light-emitting diodes has higher light intensity and huge development potential than thin-film light-emitting diodes in the field of optoelectronic applicatio...

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Bibliographic Details
Main Authors: ChaoLi, 李超
Other Authors: Chau-Nan Hong
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/56076203566967252364