P-N GaN nanodevice fabrication and transfer technology
碩士 === 國立成功大學 === 化學工程學系 === 104 === Due to high surface-to-volume ratio and low defect concentration, gallium nitride 1-D nano-structure light-emitting diodes has higher light intensity and huge development potential than thin-film light-emitting diodes in the field of optoelectronic applicatio...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/56076203566967252364 |