P-N GaN nanodevice fabrication and transfer technology

• Main Authors: ChaoLi, 李超
• Other Authors: Chau-Nan Hong
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/56076203566967252364

碩士 === 國立成功大學 === 化學工程學系 === 104 === Due to high surface-to-volume ratio and low defect concentration, gallium nitride 1-D nano-structure light-emitting diodes has higher light intensity and huge development potential than thin-film light-emitting diodes in the field of optoelectronic application. There are two parts in this work: the first one is focused on the growth of gallium nitride 1-D nano-structure LED by homemade plasma-enhanced chemical vapor deposition system; The second part is about the development of device transfer technology, which can solve the problem the bottom of single nanorod has a small cross-sectional area. In the first part, high quality undoped GaN nanorods were grown on the n+ Si(100) substrate. We used Mg3N2 as the dopant to grow p-type GaN, then used Cl2-enhanced PECVD system to grow AlGaN electron blocking layer. Finally, GaN/AlGaN LED device was fabricated. The rectifying I-V curves confirmed the formation of P-N junction and violet electroluminescence was observed under 100mA. For the P-N GaN LED device, the rectifying I-V curve was found and violet electroluminescence was observed under 12V. The brightness increased at first and then decreased with the voltage rising. In the second part, GaN nanorods were grown on the p+ Si(100) substrate with 300nm SiO2 layer. Because the bottom of single nanorod has a very small cross-sectional area, it’s very easy to be burnt down while injecting higher current. So we developed device transfer technology to separate nanodevice from original substrate and attach it into another substrate, finally made it into device. From the I-V curve, it was found all interfaces have good contact after transferring.