Growth of hexagonal BN on Si substrate using Plasma-assisted Molecular Beam Epitaxy
碩士 === 國立成功大學 === 物理學系 === 104 === In this study, we grow wafer scale h-BN thin films on Si(111) substrate using plasma-assisted molecular beam epitaxy (PA-MBE) system. We used in situ reflection high-energy electron diffraction (RHEED) to monitor the epitaxial h-BN thin film. Firstly, we grow β-Si3...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73485455570901255252 |