Microwave Plasma Chemical Vapor Deposition of Boron Doped Diamond and its Sensor Applications

• Main Authors: Cheng-LungChung, 鍾政龍
• Other Authors: Yon-Hua Tzeng
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/32c42n

碩士 === 國立成功大學 === 微電子工程研究所 === 104 === Nowadays, Internet of things (IOT) is the most popular issue in our life. A wide range of sensors would play an important role in IOT. In the field of biotechnology, the implant sensors need very good biocompatibility and that is why diamond could be a choice to be an implant sensor. Diamond has a lot of good advantages, such as excellent hardness, good chemical stability and high thermal conductivity. Last but not least, biocompatibility is the reason why we used diamond. If diamond could be an implant sensor to detect different bio-materials, diamond may have a good reliability and stability. In the field of biotechnology, not only the good biocompatibility diamond has, but also the good characteristic of electrical chemistry should be discussed. Diamond has wide potential window and low background current which means diamond has good potential to detect many bio-materials. When diamond is treated by different process, such as boron doping. The performance could be better. In this study, we try to use microwave plasma chemical vapor deposition system to grow boron doped diamond films on silicon wafer. After the growing process, we do some test to check the characteristics of boron doped diamond. Then we used boron doped diamond to create sensor to do cyclic voltammetry (CV) test. Check the boron doped diamond’s behavior of electrical chemistry in different electrolyte. We also use sputter to grow platinum film on SiO2 and use it to do CV test. Compare the electrical chemistry behavior between boron doped diamond and Pt electrode.