A Novel Doping Method of Silicon Devices and Their Application for 3D Integration
博士 === 國立成功大學 === 微電子工程研究所 === 104 === The main goal of this dissertation is to fabricate Si-based devices through novel doping techniques, including hot-wire ion implantation doping (HWID) and inductively coupled plasma (ICP)-assisted HWID (IHWID), and their application for 3D integration. First, w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tkym77 |