Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Aluminum Oxide
碩士 === 國立成功大學 === 微電子工程研究所 === 104 === The high sheet-carrier concentration in AlGaN/GaN high-electron-mobility transistors (HEMTs) is attributed to the lattice mismatch in the AlGaN/GaN structure interface. Therefore, HEMTs are often operated in depletion mode (D-mode, normally activated). However,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rm7vgm |