Research of Silicon-Rich-Oxide/Silicon Dioxide Multilayers Based Light Emitting Diode

• Main Authors: Syue-ChihTseng, 曾學智
• Other Authors: Chuan-Feng Shih
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/x8ks73

碩士 === 國立成功大學 === 電機工程學系 === 104 === In this study, silicon-rich oxide/silicon dioxide multilayers (SRO/SiO2 MLs) were synthesized by reactive magnetron sputtering in a gas mixture of argon and oxygen. In particularly, the variation from 0 to1.0 sccm in the oxygen flow was used. The structural, optical, and electrical properties of the SRO/SiO2 MLs were investigated by TEM, PL, XPS and EL measurements, where the excitation laser was employed by the 325, 532 and 633 nm for the PL analysis. The PL emission was originated from the band-to-band transition within the Si-NCs and the radiative recombination centers at the Si-NCs/SiO2 interface. The results demonstrate that size of Si-NCs was decreased due to quantum-size effect as increasing the oxygen flow. The enhancement of EL in the visible range was achieved by using oxygen flow of 0.15 sccm. Relationship between PL and EL in the SRO/SiO2 MLs has been examined. The blueshift in the EL was attributed to the band filling effect under high current injection mode. The EL spectra at different oxygen flows were recorded, and the correlation between charge transport mechanisms and EL properties was discussed.