Fabrications of LaGdO3 Thin Film by Using RF Sputtering for Transparent Microelectronic Applications
碩士 === 國立成功大學 === 電機工程學系 === 104 === In this research we choose the rare earth ternary oxide as the gate dielectric material for the transparent microelectronic application. We deposit the LaGdO3 thin film on the ITO/glass substrate by RF sputtering and select the Al metal as the top electrode. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03994769760139075897 |