Fabrications of LaGdO3 Thin Film by Using RF Sputtering for Transparent Microelectronic Applications

• Main Authors: Min-ShiangHsu, 許閔翔
• Other Authors: Cheng-Liang Huang
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/03994769760139075897

碩士 === 國立成功大學 === 電機工程學系 === 104 === In this research we choose the rare earth ternary oxide as the gate dielectric material for the transparent microelectronic application. We deposit the LaGdO3 thin film on the ITO/glass substrate by RF sputtering and select the Al metal as the top electrode. The first part of this research is the dielectric properties about Al/LGO/ITO/glass structure, and the second part is the resistive switching property. According to physical and electrical analysis, the thin film with substrate temperature 400℃ and electrode unanneled exists the better electrical characteristics and uniform morphology. In the effect of annealing temperature analysis, we found that 500℃ is the better annealing temperature with smooth morphology、higher permittivity (K~23.9@1MHz)、less dissipation factor (0.85@1MHz)、lower leakage current density(10-8 A/cm2 @15 V)and 80% transmittance in the visible spectral region. There are some trade-off problems in the different annealing atmosphere. For instance, the sample annealed in N2-H2 atmosphere shows the higher dielectric properties than samples annealed in air or pure oxygen but existing worst leakage current density which is attributed to more oxygen vacancy in the film. On the other hand, the on/off ratio of unipolar RRAM can reach above 4 orders that’s enough for memory application. In the end, we consider that LaGdO3 thin film applies on ITO/glass transparent substrate will be the potential material for the transparent electronic circuit.