AlGaN-based Light Emitting Diode with different carrier injection mode
碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === In this study, we demonstrated the UV-LEDs with reactive plasma deposited (RPD) AlN and high temperature (HT) AlN nucleation layer. We found that reactive plasma deposited AlN film has flat surface roughness and high crystal quality. Furthermore, we developed...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ttf9fn |