AlGaN-based Light Emitting Diode with different carrier injection mode
碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === In this study, we demonstrated the UV-LEDs with reactive plasma deposited (RPD) AlN and high temperature (HT) AlN nucleation layer. We found that reactive plasma deposited AlN film has flat surface roughness and high crystal quality. Furthermore, we developed...
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| Format: | Others |
| Language: | zh-TW |
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2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ttf9fn |
| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === In this study, we demonstrated the UV-LEDs with reactive plasma deposited (RPD) AlN and high temperature (HT) AlN nucleation layer. We found that reactive plasma deposited AlN film has flat surface roughness and high crystal quality. Furthermore, we developed that AlGaN/AlN superlattic structure were grown on AlN nucleation layer, it can significantly reduce dislocation density and cracks caused by differences in the lattice constant. Therefore, we applied above methods to fabricate AlGaN-based UV-LEDs of 320nm and the light output power is enhanced. On the other hand, we applied diffusion-assisted (D-A) way in UV-LEDs. Although the light output power of the D-A LEDs is less than the traditional LEDs at present. We believed it was a potential way to improve efficiency drop of the traditional LEDs caused by carrier leakage.
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